Electron trapping mechanism in a multi-level organic fet memory using lithium-ion-encapsulated fullerene as the floating gate

  • Cuong Manh Tran

    University of Transport and Communications, No 3 Cau Giay Street, Hanoi, Vietnam.
Email: cuong.tran@utc.edu.vn
Từ khóa: Organic field-effect transistor, Multi-level memory, Lithium-ion-encapsulated fullerene

Tóm tắt

We report on the electron trapping mechanism in a multi-level organic field effect transistor (OFET) memory using Lithium-ion-encapsulated fullerene (Li+@C60) as the floating gate. Based on the estimation of trapped electron number per each Li+@C60 molecule when a programming voltage was applied, the active domain of the floating gate was determined to be the surface of the Li+@C60 domain. An analysis of the cyclic voltammetry indicated that each Li+@C60 molecule can trap electrons at the trapping energy level of -4.94 and -4.49 eV. The number of trapped electron was confirmed by the ultraviolet-visible spectroscopy (UV-Vis).

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