Electron trapping mechanism in a multi-level organic fet memory using lithium-ion-encapsulated fullerene as the floating gate
Email:
cuong.tran@utc.edu.vn
Từ khóa:
Organic field-effect transistor, Multi-level memory, Lithium-ion-encapsulated fullerene
Tóm tắt
We report on the electron trapping mechanism in a multi-level organic field effect transistor (OFET) memory using Lithium-ion-encapsulated fullerene (Li+@C60) as the floating gate. Based on the estimation of trapped electron number per each Li+@C60 molecule when a programming voltage was applied, the active domain of the floating gate was determined to be the surface of the Li+@C60 domain. An analysis of the cyclic voltammetry indicated that each Li+@C60 molecule can trap electrons at the trapping energy level of -4.94 and -4.49 eV. The number of trapped electron was confirmed by the ultraviolet-visible spectroscopy (UV-Vis).Tài liệu tham khảo
[1] T. Sekitani, T. Someya, Ambient Electronics, Jpn. J. Appl. Phys. 51, (2012) 100001.
[2] J.M. Topple, S.M. McAfee, G.C. Welch, I.G. Hill, Pivotal factors in solution-processed, non-fullerene, all small-molecule organic solar cell device optimization, Org. Electron., 27 (2015) 197-201. https://doi.org/10.1016/j.orgel.2015.09.020
[3] P. Heremans, G.H. Gelinck, R. Müller, K.-J. Baeg, D.-Y. Kim, Y.-Y. Noh, Polymer and Organic Nonvolatile Memory Devices, Chem. Mater., 23 (2011) 341-358. https://doi.org/10.1021/cm102006v
[4] R.C.G. Naber, B. de Boer, P.W.M. Blom, D.M. de Leeuw, Low-voltage polymer field-effect transistors for nonvolatile memories, Appl. Phys. Lett., 87 (2005) 203509. https://doi.org/10.1063/1.2132062
[5] H.E. Katz, X.M. Hong, A. Dodabalapur, R. Sarpeshkar, Organic field-effect transistors with polarizable gate insulators, J. Appl. Phys, 91 (2002) 1572. https://doi.org/10.1063/1.1427136
[6] K.-J. Baeg, Y.-Y. Noh, J. Ghim, S.-J. Kang, H. Lee, D.-Y. Kim, Organic Non-volatile memory based on Pentacene field-effect transistors using a polymeric gate electret, Adv. Mater., 18 (2006) 3179-3183. https://doi.org/10.1002/adma.200601434
[7] T. Sekitani, T. Yokota, U. Zschieschang, H. Klauk, S. Bauer, K. Takeuchi, M. Takamiya, T. Sakurai, T. Someya, Organic nonvolatile memory transistors for flexible sensor arrays, Science, 326 (2009) 1516-1519. DOI: 10.1126/science.1179963
[8] C.-C. Shih, W.-Y. Lee, Y.-C. Chiu, H.-W. Hsu, H.-C. Chang, C.-L. Liu and W.-C. Chen, High performance transparent transistor memory devices using nano-floating gate of polymer/ZnO nanocomposites, Scientific Reports, 6 (2016) 20129. https://doi.org/10.1038/srep20129
[9] S.M. Sze, Kwok K. Ng, Physics of semiconductor devices, (John Wiley & Sons, 2006) 3rd ed., John Wiley & Sons, 352, 2006.
[10] Y. Kawashima, K. Ohkubo, S. Fukuzumi, Efficient charge separation on Li(+)@C60 supramolecular complexs with eletron donors, Chem. Asian J., 10 (2015) 44-54. https://doi.org/10.1002/asia.201403075
[11] S. Fukuzumi, K. Ohkubo, Y. Kawashima, D.S. Kim, J.S. Park, A. Jana, V.M. Lynch, D. Kim, J.L. Sessler, Ion-controlled on-off switch of electron transfer from tetrathiafulvalene calix[4]pyrroles to Li+@C60, J. Am. Chem. Soc., 133 (2011) 15938-15941. https://doi.org/10.1021/ja207588c
[12] C.M. Tran, H. Sakai, Y. Kawashima, K. Ohkubo, S. Fukuzumi, and H. Murata, Multi-level non-volatile organic transistor-based memory using Lithium-ion-encapsulated fullerene as a charge trapping layer, Org. Electron., 45 (2017) 234-239. https://doi.org/10.1016/j.orgel.2017.03.018
[13] Rino Michelroni, Luca Crippa, Alessia Marelli, Inside NAND Flash Memories, Springer Science & Business Media, 5-6, 2010.
[14] S.M. Sze, Kwok K. Ng, Physics of semiconductor devices, 3rd ed., John Wiley & Sons, 354, 2006.
[15] T.T. Dao, T. Matsushima, H. Murata, Organic nonvolatile memory transistors based on fullerene and an electron-trapping polymer, Org. Electron., 13 (2012) 2709-2715. https://doi.org/10.1016/j.orgel.2012.07.041
[16] S. Aoyagi, E. Nishibori, H. Sawa, K. Sugimoto, M. Takata, Y. Miyata, R. Kitaura, H. Shinohara, H. Okada, T. Sakai, Y. Ono, K. Kawachi, K. Yokoo, S. Ono, K. Omote, Y. Kasama, S. Ishikawa, T. Komuro, H. Tobita, A layered ionic crystal of pola Li@C60 superatoms, Nat. Chem., 2 (2010) 678-683. https://doi.org/10.1038/nchem.698
[17] Sam-Shajing Sun, Larry R. Dalton, Introduction to Organic Electronic and Optoelectronic Materials and Devices, CRC Press, 189, 2008.
[2] J.M. Topple, S.M. McAfee, G.C. Welch, I.G. Hill, Pivotal factors in solution-processed, non-fullerene, all small-molecule organic solar cell device optimization, Org. Electron., 27 (2015) 197-201. https://doi.org/10.1016/j.orgel.2015.09.020
[3] P. Heremans, G.H. Gelinck, R. Müller, K.-J. Baeg, D.-Y. Kim, Y.-Y. Noh, Polymer and Organic Nonvolatile Memory Devices, Chem. Mater., 23 (2011) 341-358. https://doi.org/10.1021/cm102006v
[4] R.C.G. Naber, B. de Boer, P.W.M. Blom, D.M. de Leeuw, Low-voltage polymer field-effect transistors for nonvolatile memories, Appl. Phys. Lett., 87 (2005) 203509. https://doi.org/10.1063/1.2132062
[5] H.E. Katz, X.M. Hong, A. Dodabalapur, R. Sarpeshkar, Organic field-effect transistors with polarizable gate insulators, J. Appl. Phys, 91 (2002) 1572. https://doi.org/10.1063/1.1427136
[6] K.-J. Baeg, Y.-Y. Noh, J. Ghim, S.-J. Kang, H. Lee, D.-Y. Kim, Organic Non-volatile memory based on Pentacene field-effect transistors using a polymeric gate electret, Adv. Mater., 18 (2006) 3179-3183. https://doi.org/10.1002/adma.200601434
[7] T. Sekitani, T. Yokota, U. Zschieschang, H. Klauk, S. Bauer, K. Takeuchi, M. Takamiya, T. Sakurai, T. Someya, Organic nonvolatile memory transistors for flexible sensor arrays, Science, 326 (2009) 1516-1519. DOI: 10.1126/science.1179963
[8] C.-C. Shih, W.-Y. Lee, Y.-C. Chiu, H.-W. Hsu, H.-C. Chang, C.-L. Liu and W.-C. Chen, High performance transparent transistor memory devices using nano-floating gate of polymer/ZnO nanocomposites, Scientific Reports, 6 (2016) 20129. https://doi.org/10.1038/srep20129
[9] S.M. Sze, Kwok K. Ng, Physics of semiconductor devices, (John Wiley & Sons, 2006) 3rd ed., John Wiley & Sons, 352, 2006.
[10] Y. Kawashima, K. Ohkubo, S. Fukuzumi, Efficient charge separation on Li(+)@C60 supramolecular complexs with eletron donors, Chem. Asian J., 10 (2015) 44-54. https://doi.org/10.1002/asia.201403075
[11] S. Fukuzumi, K. Ohkubo, Y. Kawashima, D.S. Kim, J.S. Park, A. Jana, V.M. Lynch, D. Kim, J.L. Sessler, Ion-controlled on-off switch of electron transfer from tetrathiafulvalene calix[4]pyrroles to Li+@C60, J. Am. Chem. Soc., 133 (2011) 15938-15941. https://doi.org/10.1021/ja207588c
[12] C.M. Tran, H. Sakai, Y. Kawashima, K. Ohkubo, S. Fukuzumi, and H. Murata, Multi-level non-volatile organic transistor-based memory using Lithium-ion-encapsulated fullerene as a charge trapping layer, Org. Electron., 45 (2017) 234-239. https://doi.org/10.1016/j.orgel.2017.03.018
[13] Rino Michelroni, Luca Crippa, Alessia Marelli, Inside NAND Flash Memories, Springer Science & Business Media, 5-6, 2010.
[14] S.M. Sze, Kwok K. Ng, Physics of semiconductor devices, 3rd ed., John Wiley & Sons, 354, 2006.
[15] T.T. Dao, T. Matsushima, H. Murata, Organic nonvolatile memory transistors based on fullerene and an electron-trapping polymer, Org. Electron., 13 (2012) 2709-2715. https://doi.org/10.1016/j.orgel.2012.07.041
[16] S. Aoyagi, E. Nishibori, H. Sawa, K. Sugimoto, M. Takata, Y. Miyata, R. Kitaura, H. Shinohara, H. Okada, T. Sakai, Y. Ono, K. Kawachi, K. Yokoo, S. Ono, K. Omote, Y. Kasama, S. Ishikawa, T. Komuro, H. Tobita, A layered ionic crystal of pola Li@C60 superatoms, Nat. Chem., 2 (2010) 678-683. https://doi.org/10.1038/nchem.698
[17] Sam-Shajing Sun, Larry R. Dalton, Introduction to Organic Electronic and Optoelectronic Materials and Devices, CRC Press, 189, 2008.
Tải xuống
Chưa có dữ liệu thống kê
Nhận bài
28/05/2019
Nhận bài sửa
18/06/2019
Chấp nhận đăng
23/06/2019
Xuất bản
15/11/2019
Chuyên mục
Công trình khoa học
Kiểu trích dẫn
Cuong Manh, T. (1573750800). Electron trapping mechanism in a multi-level organic fet memory using lithium-ion-encapsulated fullerene as the floating gate. Tạp Chí Khoa Học Giao Thông Vận Tải, 70(3), 193-200. https://doi.org/10.25073/tcsj.70.3.27
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