A study on memory data retention in high-temperature environments for automotive
Email:
daotoan@utc.edu.vn
Từ khóa:
Automotive memory, high-temperature operation, stretched-exponential, car memory reliability
Tóm tắt
The automotive memory devices especially work in high-temperature because they are located close to engine, exhaust units; those require high reliable operation and long-life data retention in high-temperature environments. This paper reports on the investigation of memory data retention of a nano-organic material-based nonvolatile memory in high-temperature environments. The decay of memory state current was theoretically presented as a stretched-exponential law. By fitting the measured currents to the stretched-exponential equation at different temperatures, the activation energy of decay and acceleration factor was deduced, which allows to predict the device performance at high-temperature environment like in a car. The method presented in study can be applied to estimate the memory data retention at high-temperature for other car memoriesTài liệu tham khảo
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[6] H. Sirringhaus, Reliability of organic field-effect transistors, Adv. Mater. 21 (2009) 3859–3873.
[7] T. T. Dao et al., Low switching voltage, high-stability organic phototransistor memory based on a photoactive dielectric and an electron trapping layer, Organic Electronics (2019) 105505 (in press). https://doi.org/10.1016/j.orgel.2019.105505
[8] D. M.de Leeuw et al,. Dynamics of Threshold Voltage Shifts in Organic and Amorphous Silicon Field-Effect Transistors, Adv. Mater. 19 (2007) 2785. https://doi.org/10.1002/adma.200602798
[9] H.H.Choi, W. H. Lee, K.Cho, Bias-stress-induced charge trapping at polymer chain ends of polymer gate-dielectrics in organic transistors, Adv. Funct. Mater. 22 (2012) 4833. https://doi.org/10.1002/adfm.201201084
[10] H.H. Choi et al., Decoupling the bias-stress-induced charge trapping in semiconductors and gate-dielectrics of organic transistors using a double stretched-exponential formula, Adv. Funct. Mater. 23 (2013) 690–696. https://doi.org/10.1002/adfm.201201545
[11] T.N. Ng, B. Russo, A.C. Arias, Degradation mechanisms of organic ferroelectric field-effect transistors used as nonvolatile memory, J. Appl. Phys. 106 (2009) 094504. https://doi.org/10.1063/1.3253758
[12] K. Lee et al., Memory effect in organic transistor: controllable shifts in threshold voltage, Chem. Phys. Lett. 551 (2012) 105. https://doi.org/10.1016/j.cplett.2012.09.022
[2] F. Pieri et al., Limits of sensing and storage electronic components for highreliable and safety-critical automotive applications, International Conference of Electrical and Electronic Technologies for Automotive, 2017, 7 pages. https://doi.org/10.23919/EETA.2017.7993219
[3] https://www.fujitsu.com/uk/about/resources/news/press-releases/2017/feeu-20170202-1.html (accessed 16 Nov 2019).
[4] https://www.flashmemorysummit.com/English/Collaterals/Proceedings/2017/20170808_FT12_Huonker.pdf (accessed 30 October 2019).
[5] Cuong Manh Tran, Electron trapping mechanism in a multi-level organic FET memory using lithium-ion-encapsulated fullerene as the floating gate, Transport and Communication Science Journal, 70 (2019) 193-200. https://doi.org/10.25073/tcsj.70.3.5
[6] H. Sirringhaus, Reliability of organic field-effect transistors, Adv. Mater. 21 (2009) 3859–3873.
[7] T. T. Dao et al., Low switching voltage, high-stability organic phototransistor memory based on a photoactive dielectric and an electron trapping layer, Organic Electronics (2019) 105505 (in press). https://doi.org/10.1016/j.orgel.2019.105505
[8] D. M.de Leeuw et al,. Dynamics of Threshold Voltage Shifts in Organic and Amorphous Silicon Field-Effect Transistors, Adv. Mater. 19 (2007) 2785. https://doi.org/10.1002/adma.200602798
[9] H.H.Choi, W. H. Lee, K.Cho, Bias-stress-induced charge trapping at polymer chain ends of polymer gate-dielectrics in organic transistors, Adv. Funct. Mater. 22 (2012) 4833. https://doi.org/10.1002/adfm.201201084
[10] H.H. Choi et al., Decoupling the bias-stress-induced charge trapping in semiconductors and gate-dielectrics of organic transistors using a double stretched-exponential formula, Adv. Funct. Mater. 23 (2013) 690–696. https://doi.org/10.1002/adfm.201201545
[11] T.N. Ng, B. Russo, A.C. Arias, Degradation mechanisms of organic ferroelectric field-effect transistors used as nonvolatile memory, J. Appl. Phys. 106 (2009) 094504. https://doi.org/10.1063/1.3253758
[12] K. Lee et al., Memory effect in organic transistor: controllable shifts in threshold voltage, Chem. Phys. Lett. 551 (2012) 105. https://doi.org/10.1016/j.cplett.2012.09.022
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Nhận bài
17/11/2019
Nhận bài sửa
28/01/2020
Chấp nhận đăng
30/01/2020
Xuất bản
31/01/2020
Chuyên mục
Công trình khoa học
Kiểu trích dẫn
Dao Thanh, T. (1580403600). A study on memory data retention in high-temperature environments for automotive. Tạp Chí Khoa Học Giao Thông Vận Tải, 71(1), 27-36. https://doi.org/10.25073/tcsj.71.1.4
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